RGW60TS65GC13
- Description
- Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-247
- Max Power Dissipation
- 178W
- Collector Emitter Saturation Voltage
- 1.9V
- Collector Emitter Voltage (VCEO)
- 650V
Quantity
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- Max Collector Current: 60A
- Collector Emitter Saturation Voltage: 1.9V
- Max Operating Temperature: 175°C
- Min Operating Temperature: -40°C
- Max Power Dissipation: 178W
- 3-Terminal Configuration for Easy Integration
The ROHM Insulated Gate Bipolar Transistor is a powerful N-Channel device designed for high-efficiency switching applications. With a maximum collector current of 60A and a collector emitter voltage rating of 650V, this IGBT is ideal for demanding power electronics applications. Its robust construction allows for operation in extreme temperatures, making it suitable for various industrial uses. The TO-247 package ensures easy integration into your designs while maintaining excellent thermal performance.
The Insulated Gate Bipolar Transistor (IGBT) is commonly used in power electronics applications such as motor drives, renewable energy systems, and industrial equipment. It features high efficiency and fast switching capabilities, making it ideal for high-voltage operations. Engineers and designers in the power electronics sector utilize this component to enhance system performance while managing high power levels efficiently.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.