IS43QR16512A-075VBLI

Description
DRAM Chip DDR4 SDRAM 8Gbit 512M x 16 1.2V 96-Pin TWBGA
Datasheet
ISSI IS43QR16512A-075VBLI product image

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  • High Capacity 8Gbit Memory
  • Operating Supply Voltage 1.2V
  • Max Frequency 1.333GHz
  • Compact 96-Pin TWBGA Package
  • Wide Operating Temperature Range -40°C to 95°C

The ISSI DRAM Chip DDR4 SDRAM is a high-performance memory solution designed for modern computing applications. With a capacity of 8Gbit and a configuration of 512M x 16, this chip operates at a supply voltage of 1.2V, making it energy efficient while delivering exceptional speed and reliability. Its compact 96-pin TWBGA package ensures easy integration into various electronic devices, providing a robust memory option for both consumer and industrial applications.

This DRAM chip is designed for use in high-performance computing applications, offering efficient storage and retrieval of data. With a maximum frequency of 1.333GHz and a voltage supply of 1.2V, it is ideal for use in servers, laptops, and embedded systems. Electronics manufacturers and developers utilize this component to enhance memory performance and reliability in their products.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090

Quantity

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