BAS28E-6327
- Description
- SILICON SWITCHING DIODE Rectifier Diode, 2 Element, 0.2A, 80V V(RRM), Silicon
- Reverse Recovery Time
- 6ns
- Datasheet

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- Maximum Reverse Voltage Rating: 80V
- Reverse Recovery Time: 6ns
- Max Power Dissipation: 330mW
- Two Element Configuration
- Four Terminal Design
The SIEMENS SILICON SWITCHING DIODE is a reliable and efficient rectifier diode designed for various electronic applications. With a maximum current rating of 0.2A and a reverse voltage rating of 80V, this diode ensures optimal performance in power management and signal processing tasks. Its compact design with four terminals makes it suitable for space-constrained environments while maintaining high reliability and efficiency.
The SILICON SWITCHING DIODE is commonly used in electronic circuits for rectification and switching applications. With a reverse recovery time of 6ns and a maximum power dissipation of 330mW, it is ideal for fast-switching tasks in power supplies and signal processing. This diode is frequently utilized by engineers and designers in the development of reliable, high-performance electronic devices.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.