FGH40N60SMDF
- Description
- Trans IGBT Chip N=-CH 600V 80A 349000mW 3-Pin(3+Tab) TO-247 Tube
- Max Power Dissipation
- 349W
- Collector Emitter Saturation Voltage
- 1.9V
- Collector Emitter Voltage (VCEO)
- 600V
- Continuous Collector Current
- 80A
- Max Junction Temperature (Tj)
- 175°C
- Datasheet
Quantity
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- Collector Emitter Breakdown Voltage: 600V
- Max Collector Current: 80A
- Power Dissipation: 349W
- Fast Switching Performance with 90ns Reverse Recovery Time
- Lead Free and RoHS Compliant
The onsemi Trans IGBT Chip N=-CH is a powerful and efficient component designed for high-performance applications requiring robust power management. With a collector emitter breakdown voltage of 600V and a maximum collector current of 80A, this IGBT chip is ideal for demanding industrial and commercial applications. Housed in a TO-247 package, it ensures reliable operation and easy integration into various systems.
The Trans IGBT Chip is designed for high-voltage and high-current applications, commonly used in industrial motor drives, power inverters, and switching power supplies. Its key capabilities include low saturation voltage and fast switching times, making it ideal for efficient energy conversion. Engineers and designers in the power electronics sector utilize this component to enhance system reliability and performance.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.