OP600C
- Description
- NPN Silicon Phototransistor, Voltage - Collector Emitter Breakdown 25V, PILL-2
- Collector Emitter Voltage (VCEO)
- 400mV
- Dark Current
- 100nA
- Max Collector Current
- 50mA
- Peak Wavelength
- 890nm
- Datasheet
Quantity
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- Collector Emitter Breakdown Voltage: 25V
- Max Collector Current: 50mA
- Rise Time: 15µs
- Fall Time: 15µs
- Peak Wavelength: 890nm
- Max Operating Temperature: 125°C
The Optek PILL-2 is a high-performance NPN silicon phototransistor designed for efficient light detection in various applications. With a collector emitter breakdown voltage of 25V, this phototransistor is ideal for use in optical sensing and communication systems. Its compact module package and top view orientation make it suitable for surface mount technology, ensuring easy integration into your electronic designs. The PILL-2 operates effectively across a wide temperature range, making it a reliable choice for demanding environments.
The NPN Silicon Phototransistor is commonly used in optical sensing and light detection applications. It features a peak wavelength sensitivity of 890nm, making it suitable for infrared light detection. Key capabilities include high-speed response with rise and fall times of 15µs, and it is typically utilized in consumer electronics, automation, and safety systems where precise light measurements are crucial.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.