W66DP2RQQAGJ

Description
DRAM Chip Mobile LPDDR4X SDRAM 8Gbit 256Mx32 1.1V/1.8V 200-Pin
Memory Technology
LPDDR4X
Memory Type
SDRAM
Access Time
3.5ns
Winbond W66DP2RQQAGJ product image

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  • 8Gbit density, 256M x32 organization
  • LPDDR4X SDRAM, 1866M Hz clock (3733 MT/s data rate)
  • Dual supply: 1.1V core / 1.8V I/O
  • 200-ball TFBGA package
  • Extended temperature range -40C to +105C

The Winbond W66DP2RQQAGJ is an 8Gbit Mobile LPDDR4X SDRAM organized as 256M x32, supplied in a 200-ball TFBGA package. It supports dual supply operation at 1.1V and 1.8V and runs at a 1866M Hz clock (3733 MT/s). It is rated for the extended temperature range of -40C to +105C.

This low-power LPDDR4X SDRAM is used in mobile and embedded systems such as edge AI devices, industrial IoT, automotive telematics, and networking equipment where high bandwidth is needed at low power. Its x32 width delivers wide memory throughput in a single package for compact, power-sensitive designs.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090

Quantity

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