Description
Trans Voltage Suppressor Diode, 200W, 170V V(RWM), Unidirectional, 1 Element, Silicon
Breakdown Voltage
199V
Polarity
Unidirectional
Clamping Voltage
275V
Reverse Standoff Voltage
170V
Datasheet
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  • Unidirectional Polarity for Effective Protection
  • Breakdown Voltage: 199V
  • Clamping Voltage: 275V
  • Max Operating Temperature: 150°C
  • Max Surge Current: 600mA
  • Termination: SMD/SMT for Easy Integration

The Central Semiconductor Trans Voltage Suppressor Diode is designed to protect sensitive electronic components from voltage spikes and transients. With a peak pulse power rating of 200W and a reverse standoff voltage of 170V, this unidirectional diode is ideal for various applications requiring reliable overvoltage protection. Its robust construction and high breakdown voltage make it suitable for use in demanding environments, ensuring the longevity and performance of your electronic devices.

The Trans Voltage Suppressor Diode is commonly used to protect sensitive electronic components from voltage spikes and transients. With a breakdown voltage of 199V and a peak pulse power of 200W, it is ideal for applications in telecommunications, automotive, and consumer electronics. Engineers prefer this diode for its reliability and capability to handle surge currents up to 600mA.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090

Quantity

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