LBSS139DW1T1G
- Description
- Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Quantity
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- N-Channel Configuration for Enhanced Performance
- Maximum Drain Current: 0.2A
- Voltage Rating: 50V
- Silicon Metal-Oxide Semiconductor Technology
- Compact 2-Element Design for Space Efficiency
The Leshan Radio Co. Small Signal Field-Effect Transistor is a versatile N-Channel MOSFET designed for efficient switching and amplification in low-power applications. With a maximum drain current of 0.2A and a voltage rating of 50V, this silicon-based transistor is ideal for various electronic circuits requiring reliable performance. Its 2-element configuration ensures compact integration into your designs, making it a perfect choice for both hobbyists and professionals in the electronics field.
The Small Signal Field-Effect Transistor is commonly used for signal amplification and switching applications in low-power electronic circuits. It features a maximum drain current of 0.2 A and a drain-source voltage of 50 V, making it suitable for various consumer electronics and communication devices. Engineers and hobbyists utilize it in circuit designs for its reliability and efficiency.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.