IRF7811AVTR
- Description
- 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
- Drain to Source Voltage (Vdss)
- 30V
- Continuous Drain Current (ID)
- 10.8A
- Drain to Source Resistance
- 14mΩ
- Input Capacitance
- 1.801nF
- Datasheet
Quantity
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- Surface Mount SOIC Package
- Drain to Source Voltage: 30V
- Continuous Drain Current: 10.8A
- Low Rds On Max: 14mΩ
- Wide Operating Temperature Range: -55°C to 150°C
- Fast Rise Time: 21ns
The International Rectifier 30V Single N-Channel HEXFET Power MOSFET is designed for high-efficiency power management applications. This MOSFET features a compact SO-8 package, making it ideal for surface mount technology. With a maximum drain to source voltage of 30V and a continuous drain current rating of 10.8A, it delivers reliable performance in demanding environments. The low on-resistance of 14mΩ ensures minimal power loss, while the wide operating temperature range from -55°C to 150°C allows for versatile application in various conditions.
The 30V Single N-Channel HEXFET Power MOSFET is commonly used in applications requiring efficient power management, such as power supplies, motor drives, and DC-DC converters. Its low on-resistance and high continuous drain current make it suitable for high-performance switching applications. Engineers and designers in the electronics industry utilize this component to enhance the reliability and efficiency of their circuits.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.