LBC817-40LT1G

Description
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
Collector Emitter Voltage (VCEO)
45V
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  • Maximum Collector Current: 500mA
  • Collector Base Voltage (VCBO): 50V
  • Collector Emitter Voltage (VCEO): 45V
  • Max Power Dissipation: 225mW
  • RoHS Compliant

The Leshan Radio Co. Small Signal Bipolar Transistor is a versatile NPN silicon transistor designed for efficient signal amplification and switching applications. With a maximum collector current of 500mA and a collector emitter voltage of 45V, this transistor is ideal for various electronic circuits. Its surface mount design allows for easy integration into compact layouts, making it suitable for modern electronic devices. Operating reliably in a wide temperature range from -55°C to 150°C, this component ensures performance stability in diverse environments.

The Small Signal Bipolar Transistor is commonly used for signal amplification and switching applications in electronic circuits. Key capabilities include handling collector currents up to 500mA and operating voltages up to 45V. It is ideal for use in consumer electronics, automotive systems, and industrial applications where space is limited and high performance is required.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090

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