SI2305B-TP
- Description
- P-Channel 20 V 4.2 A 60 mOhm Enhancement Mode Field Effect Transistor - SOT-23
- Continuous Drain Current (ID)
- 4.2A
- Drain to Source Resistance
- 39mΩ
- Datasheet
Quantity
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- Continuous Drain Current: 4.2 A
- Drain to Source Resistance: 39 mΩ
- Max Operating Temperature: 150°C
- Min Operating Temperature: -55°C
- Min Breakdown Voltage: 20 V
- Compact SOT-23 Package with 3 Terminals
The MCC P-Channel 20 V 4.2 A 60 m Ohm Enhancement Mode Field Effect Transistor is designed for high-efficiency switching applications. This MOSFET features a compact SOT-23 package, making it suitable for space-constrained designs. With a maximum operating temperature of 150°C and a low drain to source resistance, this transistor ensures reliable performance in demanding environments. Its robust specifications make it an ideal choice for various electronic applications requiring efficient power management.
The P-Channel 20 V 4.2 A 60 m Ohm Enhancement Mode Field Effect Transistor - SOT-23 is commonly used in low-side switching and load switching applications where high efficiency is crucial. Its characteristics make it suitable for powering and controlling signals in portable devices, battery management systems, and automotive electronic circuits. Engineers and designers in the electronics and automotive sectors frequently utilize this component for its reliability and performance.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.