1SV323,H3F(T

Description
Diodes - Variable Capacitance 4.3@C1V/C4V Independent Type 10V 400mΩ 7.1pF@4V, 1MHz SOD-523
Mount
Surface Mount
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  • Variable Capacitance: 4.3 pF at 4V
  • Low Series Resistance: 400 mΩ
  • Peak Reverse Current: 3 nA
  • Single Element Design with 2 Terminals
  • RoHS Compliant and REACH SVHC Certified

The Toshiba Variable Capacitance Diode is designed for applications requiring precise capacitance control and high-frequency performance. With a maximum operating temperature of 125°C and a minimum operating temperature of -55°C, this diode is suitable for a wide range of environments. It features a compact SOD-523 package, making it ideal for surface mount applications. This diode offers a breakdown voltage of 10V and operates effectively at a frequency of 1M Hz, ensuring reliable performance in various electronic circuits.

The Diodes - Variable Capacitance 4.3@C1V/C4V Independent Type is commonly used in RF tuning circuits, voltage-controlled oscillators, and frequency modulation applications. Its key capabilities include a variable capacitance range and low peak reverse current, making it ideal for precise electronic adjustments. Engineers and designers in telecommunications and consumer electronics often utilize this component to enhance signal quality and performance.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090

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