1SV305,L3F(T
- Description
- Variable Capacitance Diode, Very High Frequency, 18.3pF C(T), Silicon, Abrupt
- Datasheet
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- Capacitance Value: 18.3 pF C(T)
- Silicon Abrupt Junction Design
- Max Operating Temperature: 125°C
- RoHS Compliant
- Number of Terminals: 2
The Toshiba Variable Capacitance Diode is designed for very high frequency applications, offering a capacitance value of 18.3 pF C(T). This silicon diode features an abrupt junction design, making it ideal for tuning and frequency modulation in RF circuits. With its compact structure and reliable performance, it is a perfect choice for engineers looking to enhance their electronic designs with precision variable capacitance.
The Toshiba Variable Capacitance Diode is commonly used in tuning circuits, frequency modulation, and voltage-controlled oscillators. With a high capacitance value of 18.3 pF, this diode is suitable for very high frequency applications. It is typically employed by engineers in telecommunications and radio frequency design due to its precise capacitance adjustment capabilities.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.