Description
Rectifier Diode, 1 Phase, 1 Element, 1A, 1000V V(RRM), Silicon
Forward Voltage
1.3V
Max Junction Temperature (Tj)
150°C
Reverse Recovery Time
250ns
Max Repetitive Reverse Voltage (Vrrm)
1kV
Datasheet
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  • Max Repetitive Reverse Voltage: 1kV
  • Max Forward Surge Current: 30A
  • Forward Voltage: 1.3V
  • Max Operating Temperature: 150°C
  • Reverse Recovery Time: 250ns

The Taiwan Semiconductor Rectifier Diode is a reliable and efficient component designed for various applications requiring robust rectification. With a maximum repetitive reverse voltage of 1000V and a forward current rating of 1A, this silicon diode ensures optimal performance in power management and conversion tasks. Its compact design and high thermal stability make it suitable for both commercial and industrial use, providing dependable operation in demanding environments.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090

Quantity

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