Description
150nA 25V 225mW 800mA 500mV@800mA, 80mA PNP -55℃~+150℃@(Tj) SOT-23-3L Bipolar Transistors - BJT ROHS
Leshan Radio Co. L8550QLT1G product image

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  • Low Collector Current: 80mA
  • High Voltage Rating: 25V
  • Power Dissipation: 225mW
  • Temperature Range: -55°C to +150°C
  • Compact SOT-23-3L Package

The Leshan Radio Co. 150nA 25V 225mW 800mA 500mV@800mA 80mA PNP SOT-23-3L Bipolar Transistor is designed for high-efficiency applications requiring reliable performance in compact form factors. This transistor operates effectively across a wide temperature range from -55°C to +150°C, making it suitable for various demanding environments. With its low current and voltage specifications, it is ideal for low-power applications while maintaining excellent switching characteristics.

The 150nA 25V PNP Bipolar Transistor is designed for high-frequency amplification and switching applications. Commonly used in consumer electronics, communication devices, and industrial equipment, this transistor operates effectively across a wide temperature range. Engineers and hobbyists utilize it for reliable performance in various circuit designs.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090

Quantity

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