MCM2301-TP
- Description
- MOSFET P-Ch -20Vds -3.8A 10Vgs -13A Idm 1.4W
- Continuous Drain Current (ID)
- 3.8A
- Drain to Source Resistance
- 55mΩ
- Datasheet
Quantity
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- Continuous Drain Current: 3.8A
- Drain to Source Resistance: 55mΩ
- Max Operating Temperature: 150°C
- Max Power Dissipation: 1.4W
- Min Breakdown Voltage: 20V
- Number of Terminals: 6
The MCC MOSFET P-Channel -20Vds -3.8A 10Vgs -13A Idm 1.4W is a high-performance Power Transistor designed for efficient switching applications. With its robust specifications, this MOSFET is ideal for use in various electronic circuits requiring reliable performance and low on-resistance. Its compact design and high power dissipation capability make it suitable for a wide range of applications in consumer electronics, automotive, and industrial systems.
The MOSFET P-Ch -20Vds is commonly used in low-voltage applications such as power management and switching circuits. Its key capabilities include a drain current of 3.8A and a low drain to source resistance of 55mΩ, making it suitable for efficient power conversion. This component is often utilized by engineers and designers in the field of electronics and circuit design.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.