IPM018N10NM5LF2

• N-Channel polarity, 1.7 Milliohm Drain-Source on-Resistance
• 20V Gate-Source Voltage Rating (Vgs)
• 14, 000pF Input Capacitance
• PowerSFN package, 4 pins, Surface Mount
• -55C to 175C Operating Temperature Range
• RoHS compliant, Active lifecycle, 2, 000 per Reel

The IPM018N10NM5LF2 is an N-channel power MOSFET from Infineon supplied in a PowerSFN surface-mount package with four pins. Its attributes record a 1.7 milliohm drain-source on-resistance, a 20V gate-source voltage rating and a 14, 000pF input capacitance, across a -55C to 175C operating temperature range. The IPM018N10NM5LF2 is RoHS compliant, carries Active lifecycle status and ships on tape and reel in quantities of 2, 000.

Very low on-resistance N-channel MOSFETs in compact surface-mount power packages are used in synchronous rectification, server and telecom point-of-load converters, battery management and hot-swap switching, and motor drive output stages where conduction loss dominates the loss budget. The large input capacitance recorded here means gate driver sizing and switching frequency need to be considered together. No drain-source voltage rating is recorded in this product's attributes, and the 30A continuous drain current and 3.8W power dissipation values in the attribute set are inconsistent with the 1.7 milliohm on-resistance and with the 100V/285A figures in the product name, so those three ratings have been omitted here and should be confirmed against the Infineon datasheet.