IPM018N10NM5LF2
- Description
- MOSFET, N-Channel, 100V, 285A, HSOG-4;
- Gate to Source Voltage (Vgs)
- 20V
- Continuous Drain Current (ID)
- 30A
- Drain to Source Resistance
- 1.7mΩ
- Input Capacitance
- 14000pF
Quantity
220,000 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
- N-channel power MOSFET in a PowerSFN surface-mount package
- Low drain-to-source on-resistance of 1.7mΩ
- 30A continuous drain current with 20V gate-to-source rating
- Input capacitance of 14000pF, 3.8W power dissipation
- Wide operating temperature range of -55°C to 175°C, RoHS compliant
The Infineon IPM018N10NM5LF2 is an N-channel power MOSFET supplied in a PowerSFN surface-mount package. It offers a low 1.7mΩ drain-to-source on-resistance, a 30A continuous drain current, and a 20V gate-to-source voltage rating. The IPM018N10NM5LF2 is RoHS compliant and rated for a -55°C to 175°C operating range.
The Infineon IPM018N10NM5LF2 is typically used for load switching, power conversion, and synchronous rectification in high-efficiency power circuits. Its very low on-resistance and high current handling suit DC-DC converters, motor drives, and power supplies. Power-electronics engineers specify this MOSFET for compact, thermally efficient switching designs.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
220,000 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.