IKD04N60RC2ATMA1
- Description
- Igbt Transistors; Infineon; IKD04N60RC2ATMA1; 600 V; 36.6 W
- Max Power Dissipation
- 36.6W
- Collector Emitter Saturation Voltage
- 2.3V
- Collector Emitter Voltage (VCEO)
- 600V
- Continuous Collector Current
- 8A
- Max Junction Temperature (Tj)
- 175°C
Quantity
Need this part?
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Fusion-Tested. Quality Guaranteed.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
Need this part?
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Fusion-Tested. Quality Guaranteed.
See something worth saving? Create an account to track this part and get alerts on price and availability updates.
The Latest Insights