C2M0280120D
Description
2nd Generation Z-FET® 280-mΩ; 1200-V; SiC MOSFET
Gate to Source Voltage (Vgs)
20V
Drain to Source Voltage (Vdss)
1.2kV
Continuous Drain Current (ID)
10A
Drain to Source Resistance
280mO
Max Junction Temperature (Tj)
150°C
Datasheet
Quantity
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Fusion-Tested. Quality Guaranteed.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
Need this part?
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Fusion-Tested. Quality Guaranteed.
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