Wolfspeed

Manufacturers

Wolfspeed

Wolfspeed, Inc. is a leader in silicon carbide (SiC) technology, providing power and RF solutions. Their products are used in electric vehicles, renewable energy, and telecommunications.

Categories

LEDs

87

MOSFETs

151

Rectifier Diodes

13

RF Amplifiers

2

RF Transistors

102

Schottky Diodes

10

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Diode Schottky 600V 8A Automotive 3-Pin(2+Tab) TO-252 T/R
C3D02060E-TRWolfspeed
Diode Schottky 600V 8A Automotive 3-Pin(2+Tab) TO-252 T/R
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Diode Schottky 600V 8A Automotive 3-Pin(2+Tab) TO-252 T/R
C3D02060E-TRWolfspeed
Diode Schottky 600V 8A Automotive 3-Pin(2+Tab) TO-252 T/R
Available Quantity
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LED Multi-Color Chip Red/Green/Blue 624/540/480nm 30/20/20mA 6-Pin PLCC T/R
QLS6B-FKW-CNSNSF043Wolfspeed
LED Multi-Color Chip Red/Green/Blue 624/540/480nm 30/20/20mA 6-Pin PLCC T/R
Available Quantity
150,000
Ships From
HK
Lead Time
5 Days
Country of Origin
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LED Multi-Color Chip Red/Green/Blue 624/540/480nm 30/20/20mA 6-Pin PLCC T/R
QLS6B-FKW-CNSNSF043Wolfspeed
LED Multi-Color Chip Red/Green/Blue 624/540/480nm 30/20/20mA 6-Pin PLCC T/R
Available Quantity
150,000
Ships From
HK
Lead Time
5 Days
Country of Origin
-
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Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode
C3M0065090JWolfspeed
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode
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Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode
C3M0065090JWolfspeed
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode
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Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode
C3M0016120DWolfspeed
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode
Available Quantity
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Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode
C3M0016120DWolfspeed
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode
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Aerospace & Defense, 50 V, 6 GHz, 15W, Surface Mount, RoHS
CGHV27015SWolfspeed
Aerospace & Defense, 50 V, 6 GHz, 15W, Surface Mount, RoHS
Available Quantity
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Aerospace & Defense, 50 V, 6 GHz, 15W, Surface Mount, RoHS
CGHV27015SWolfspeed
Aerospace & Defense, 50 V, 6 GHz, 15W, Surface Mount, RoHS
Available Quantity
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Lead Time
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Rectifier Diode, Schottky, 1 Phase, 1 Element, 9.1A, 1200V V(RRM), Silicon Carbide, TO-252
C4D05120EWolfspeed
Rectifier Diode, Schottky, 1 Phase, 1 Element, 9.1A, 1200V V(RRM), Silicon Carbide, TO-252
Available Quantity
-
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Lead Time
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Country of Origin
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Rectifier Diode, Schottky, 1 Phase, 1 Element, 9.1A, 1200V V(RRM), Silicon Carbide, TO-252
C4D05120EWolfspeed
Rectifier Diode, Schottky, 1 Phase, 1 Element, 9.1A, 1200V V(RRM), Silicon Carbide, TO-252
Available Quantity
-
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Lead Time
-
Country of Origin
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Rectifier Diode, Schottky, 1 Phase, 1 Element, 83A, 1700V V(RRM), Silicon Carbide, TO-247
C6D25170HWolfspeed
Rectifier Diode, Schottky, 1 Phase, 1 Element, 83A, 1700V V(RRM), Silicon Carbide, TO-247
Available Quantity
-
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Lead Time
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Country of Origin
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Rectifier Diode, Schottky, 1 Phase, 1 Element, 83A, 1700V V(RRM), Silicon Carbide, TO-247
C6D25170HWolfspeed
Rectifier Diode, Schottky, 1 Phase, 1 Element, 83A, 1700V V(RRM), Silicon Carbide, TO-247
Available Quantity
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Lead Time
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Country of Origin
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Rectifier Diode, Schottky, 1 Phase, 1 Element, 4A, 600V V(RRM), Silicon Carbide, TO-252
C3D04060EWolfspeed
Rectifier Diode, Schottky, 1 Phase, 1 Element, 4A, 600V V(RRM), Silicon Carbide, TO-252
Available Quantity
-
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Lead Time
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Country of Origin
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Rectifier Diode, Schottky, 1 Phase, 1 Element, 4A, 600V V(RRM), Silicon Carbide, TO-252
C3D04060EWolfspeed
Rectifier Diode, Schottky, 1 Phase, 1 Element, 4A, 600V V(RRM), Silicon Carbide, TO-252
Available Quantity
-
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Lead Time
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Country of Origin
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LED Uni-Color White 5000K 70 2-Pin SMD EP T/R
XMLBWT-00-0000-000BU20E3Wolfspeed
LED Uni-Color White 5000K 70 2-Pin SMD EP T/R
Available Quantity
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Lead Time
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Country of Origin
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LED Uni-Color White 5000K 70 2-Pin SMD EP T/R
XMLBWT-00-0000-000BU20E3Wolfspeed
LED Uni-Color White 5000K 70 2-Pin SMD EP T/R
Available Quantity
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Lead Time
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Rectifier Diode, Schottky, 1 Phase, 1 Element, 40A, 1700V V(RRM), Silicon Carbide, TO-247
C6D10170HWolfspeed
Rectifier Diode, Schottky, 1 Phase, 1 Element, 40A, 1700V V(RRM), Silicon Carbide, TO-247
Available Quantity
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Lead Time
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Country of Origin
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Rectifier Diode, Schottky, 1 Phase, 1 Element, 40A, 1700V V(RRM), Silicon Carbide, TO-247
C6D10170HWolfspeed
Rectifier Diode, Schottky, 1 Phase, 1 Element, 40A, 1700V V(RRM), Silicon Carbide, TO-247
Available Quantity
-
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Lead Time
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Country of Origin
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Rectifier Diode, Schottky, 1 Phase, 1 Element, 16.1A, 1200V V(RRM), Silicon Carbide, TO-252
C4D10120EWolfspeed
Rectifier Diode, Schottky, 1 Phase, 1 Element, 16.1A, 1200V V(RRM), Silicon Carbide, TO-252
Available Quantity
-
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Lead Time
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Rectifier Diode, Schottky, 1 Phase, 1 Element, 16.1A, 1200V V(RRM), Silicon Carbide, TO-252
C4D10120EWolfspeed
Rectifier Diode, Schottky, 1 Phase, 1 Element, 16.1A, 1200V V(RRM), Silicon Carbide, TO-252
Available Quantity
-
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Lead Time
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Telecom, LDMOS, 28 V, 400W, 13.5 dB, Surface Mount, RoHS
PXAE263708NB-V1-R2Wolfspeed
Telecom, LDMOS, 28 V, 400W, 13.5 dB, Surface Mount, RoHS
Available Quantity
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Lead Time
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Country of Origin
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Telecom, LDMOS, 28 V, 400W, 13.5 dB, Surface Mount, RoHS
PXAE263708NB-V1-R2Wolfspeed
Telecom, LDMOS, 28 V, 400W, 13.5 dB, Surface Mount, RoHS
Available Quantity
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Lead Time
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2nd-Generation Z-FET® 1200-V; 40-mΩ; Silicon-Carbide MOSFET
C2M0040120DWolfspeed
2nd-Generation Z-FET® 1200-V; 40-mΩ; Silicon-Carbide MOSFET
Available Quantity
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2nd-Generation Z-FET® 1200-V; 40-mΩ; Silicon-Carbide MOSFET
C2M0040120DWolfspeed
2nd-Generation Z-FET® 1200-V; 40-mΩ; Silicon-Carbide MOSFET
Available Quantity
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Lead Time
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Trans MOSFET N-CH SiC 1.2KV 68A 8-Pin(7+Tab) TO-263
C3M0032120J1Wolfspeed
Trans MOSFET N-CH SiC 1.2KV 68A 8-Pin(7+Tab) TO-263
Available Quantity
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Trans MOSFET N-CH SiC 1.2KV 68A 8-Pin(7+Tab) TO-263
C3M0032120J1Wolfspeed
Trans MOSFET N-CH SiC 1.2KV 68A 8-Pin(7+Tab) TO-263
Available Quantity
-
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Lead Time
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Country of Origin
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Power MOSFET, N-Channel, 4.9 A, 1.7 Kv, 0.95 Ohm, 20 V, 2.4 V
C2M1000170DWolfspeed
Power MOSFET, N-Channel, 4.9 A, 1.7 Kv, 0.95 Ohm, 20 V, 2.4 V
Available Quantity
-
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Power MOSFET, N-Channel, 4.9 A, 1.7 Kv, 0.95 Ohm, 20 V, 2.4 V
C2M1000170DWolfspeed
Power MOSFET, N-Channel, 4.9 A, 1.7 Kv, 0.95 Ohm, 20 V, 2.4 V
Available Quantity
-
Ships From
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Lead Time
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Country of Origin
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Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 1200V V(RRM), Silicon Carbide, TO-252
C4D02120E-TRWolfspeed
Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 1200V V(RRM), Silicon Carbide, TO-252
Available Quantity
-
Ships From
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Lead Time
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Country of Origin
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Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 1200V V(RRM), Silicon Carbide, TO-252
C4D02120E-TRWolfspeed
Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 1200V V(RRM), Silicon Carbide, TO-252
Available Quantity
-
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Lead Time
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Country of Origin
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100-W; 7.9 – 9.6-GHz; 50-ohm; Input/Output-Matched; GaN HEMT Power Amplifier
CGHV96100F2Wolfspeed
100-W; 7.9 – 9.6-GHz; 50-ohm; Input/Output-Matched; GaN HEMT Power Amplifier
Available Quantity
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Lead Time
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Country of Origin
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100-W; 7.9 – 9.6-GHz; 50-ohm; Input/Output-Matched; GaN HEMT Power Amplifier
CGHV96100F2Wolfspeed
100-W; 7.9 – 9.6-GHz; 50-ohm; Input/Output-Matched; GaN HEMT Power Amplifier
Available Quantity
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RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, N-Channel, High Electron Mobility FET
CGH40010FWolfspeed
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, N-Channel, High Electron Mobility FET
Available Quantity
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RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, N-Channel, High Electron Mobility FET
CGH40010FWolfspeed
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, N-Channel, High Electron Mobility FET
Available Quantity
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LED Uni-Color Cool White 5500K 72 4-Pin PLCC T/R
CLA1A-WKW-CXAYB153Wolfspeed
LED Uni-Color Cool White 5500K 72 4-Pin PLCC T/R
Available Quantity
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LED Uni-Color Cool White 5500K 72 4-Pin PLCC T/R
CLA1A-WKW-CXAYB153Wolfspeed
LED Uni-Color Cool White 5500K 72 4-Pin PLCC T/R
Available Quantity
-
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Lead Time
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Country of Origin
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Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode
C3M0030090KWolfspeed
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode
Available Quantity
-
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Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode
C3M0030090KWolfspeed
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode
Available Quantity
-
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Lead Time
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Country of Origin
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2nd Generation Z-FET® 280-mΩ; 1200-V; SiC MOSFET
C2M0280120DWolfspeed
2nd Generation Z-FET® 280-mΩ; 1200-V; SiC MOSFET
Available Quantity
-
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Lead Time
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Country of Origin
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2nd Generation Z-FET® 280-mΩ; 1200-V; SiC MOSFET
C2M0280120DWolfspeed
2nd Generation Z-FET® 280-mΩ; 1200-V; SiC MOSFET
Available Quantity
-
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Lead Time
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Country of Origin
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LED Multi-Color Chip Red/Green/Blue 624/535/475nm 50/25/25mA 4-Pin PLCC T/R
CLV1A-FKB-CK1VW1DE1BB7C3C3Wolfspeed
LED Multi-Color Chip Red/Green/Blue 624/535/475nm 50/25/25mA 4-Pin PLCC T/R
Available Quantity
-
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Lead Time
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LED Multi-Color Chip Red/Green/Blue 624/535/475nm 50/25/25mA 4-Pin PLCC T/R
CLV1A-FKB-CK1VW1DE1BB7C3C3Wolfspeed
LED Multi-Color Chip Red/Green/Blue 624/535/475nm 50/25/25mA 4-Pin PLCC T/R
Available Quantity
-
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Lead Time
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Country of Origin
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Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode
C3M0032120DWolfspeed
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode
Available Quantity
-
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Lead Time
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Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode
C3M0032120DWolfspeed
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode
Available Quantity
-
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Lead Time
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Xlamp Xp-G Gen 3 Light Emitting Diode White |Cree Led XPGDWT-B1-0000-00K2E
XPGDWT-B1-0000-00K2EWolfspeed
Xlamp Xp-G Gen 3 Light Emitting Diode White |Cree Led XPGDWT-B1-0000-00K2E
Available Quantity
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Xlamp Xp-G Gen 3 Light Emitting Diode White |Cree Led XPGDWT-B1-0000-00K2E
XPGDWT-B1-0000-00K2EWolfspeed
Xlamp Xp-G Gen 3 Light Emitting Diode White |Cree Led XPGDWT-B1-0000-00K2E
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