CGH40010F
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- High Electron Mobility for Enhanced Performance
- Drain to Source Voltage: 120V
- Continuous Drain Current: 1.5A
- Power Dissipation: 14W
- Wide Operating Temperature Range: -40°C to 150°C
- Lead-Free & RoHS Compliant
The Wolfspeed RF Power Field-Effect Transistor is a cutting-edge 1-element N-Channel device designed for C Band applications. Utilizing advanced Gallium Nitride technology, this high electron mobility FET delivers exceptional performance in RF amplification. With its robust construction and high efficiency, it is ideal for a variety of telecommunications and broadcasting applications, ensuring reliable operation in demanding environments.
The RF Power Field-Effect Transistor is commonly used in high-frequency applications such as amplifiers and oscillators within the C Band range. Designed for high efficiency and power handling, it is ideal for communications and radar systems. Engineers and designers in the telecommunications and aerospace industries utilize this component for its reliability and robust performance.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.