CGH40180PP
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- Drain to Source Voltage (Vdss):120V
- Continuous Drain Current (ID):24A
- Gate to Source Voltage (Vgs):10V
- Max Junction Temperature (Tj):225°C
- Wide Operating Temperature Range:-40°C to 85°C
- Single Channel Design:1 Element
- RoHS Compliant:Yes
The Wolfspeed RF Power Field-Effect Transistor is a cutting-edge, high-performance N-Channel device designed for S Band applications. Utilizing advanced Gallium Nitride (GaN) technology, this transistor delivers exceptional efficiency and power handling capabilities, making it ideal for a variety of RF amplification tasks. With a robust continuous drain current rating of 24A and a maximum junction temperature of 225°C, this component is engineered for reliability and performance in demanding environments. Its compact design and compliance with RoHS standards ensure it meets the needs of modern electronic applications.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.