C2M0160120D

Description
SIC MOSFET, N-CH, 1.2KV, 17.7A, TO-247-3; Transistor Polarity: N Channel; Continu
Gate to Source Voltage (Vgs)
20V
Drain to Source Voltage (Vdss)
1.2kV
Continuous Drain Current (ID)
17.7A
Drain to Source Resistance
160mO
Input Capacitance
527pF
Max Junction Temperature (Tj)
150°C
Datasheet
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AS6081
AS9120B
ISO 9001
QMS STD 9090
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