C3M0021120K

Description
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode
Gate to Source Voltage (Vgs)
19V
Drain to Source Voltage (Vdss)
1.2kV
Continuous Drain Current (ID)
100A
Drain to Source Resistance
21mO
Max Junction Temperature (Tj)
175°C
Datasheet
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  • High Voltage Rating: 1.2kV
  • Continuous Drain Current: 100A
  • Low Drain to Source Resistance: 21mΩ
  • Max Operating Temperature: 175°C
  • Fast Switching Times: Turn-Off Delay 57ns Turn-On Delay 29ns

The Wolfspeed C3M is a cutting-edge N-Channel Enhancement Mode Power MOSFET utilizing advanced Silicon Carbide technology. Designed for high voltage applications, this MOSFET delivers exceptional performance with a drain to source voltage rating of 1.2kV and a continuous drain current of 100A. Its robust construction ensures reliability in demanding environments, making it an ideal choice for power conversion and motor control applications.

The Silicon Carbide Power MOSFET C3M is commonly used in high-voltage and high-efficiency applications, such as power inverters, power supplies, and motor drives. With its ability to handle high voltage up to 1.2kV and continuous drain currents of 100A, it is ideal for renewable energy systems and industrial applications. Engineers and designers in the power electronics field utilize this technology for its superior thermal performance and fast switching capabilities.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
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