Wolfspeed, Inc. is a leader in silicon carbide (SiC) technology, providing power and RF solutions. Their products are used in electric vehicles, renewable energy, and telecommunications.

Wolfspeed

Ferroxcube

SMC Diode Solutions Co. Ltd.

Raspberry Pi

Cambion

GEN 3 650V 25 M SIC MOSFET|SILICON CARBIDE MOSFETS

Trans MOSFET N-CH SiC 650V 97A 4-Pin(4+Tab) TO-247

Trans MOSFET N-CH SiC 1.2KV 100A Automotive 4-Pin(4+Tab) TO-247|Discrete SiC MOSFET, 1200 V, 21 mΩ, 100 A, TO-247-4, RoHS|Mosfet, N-ch, 1.2KV, 175DEG C, 469W Rohs Compliant: Yes|Power Field-Effect Transistor, 100A I

Diode - 4 Pin - Spaced v1

Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode

2nd-Generation Z-FET® 1200-V; 80-mΩ; Silicon-Carbide MOSFET|Power Field-Effect Transistor, 36A I(D), 1200V, 0.098ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247|MOSFET, N-CH, 1200V, 3

Diode - 3 Pin v3

Power Mosfet, N Channel, 31.6 A, 1.2 Kv, 0.08 Ohm, 20 V, 3.2 V Rohs Compliant: Yes

Rectifier Diode, Schottky, 1 Phase, 1 Element, 37A, 650V V(RRM), Silicon Carbide, TO-220AC|SiC, Schottky Diode, 10A, 650V, TO-220-2, Industrial, Gen 6|Rectifier Diode Schottky SiC 650V 37A 2-Pin(2+Tab) TO-220|Discrete SiC Schottky Diode, 650 V, 10 A, TO-220-2, RoHS|650 V; Z-Rec® Schottky; TO-220-2 P

Diode - 2 Pin - Metal Tab v1

Rectifier Diode, Schottky, 1 Phase, 1 Element, 37A, 650V V(RRM), Silicon Carbide, TO-220AC

Power Field-Effect Transistor|Gen 3 1200V 40mOhm SIC MOSFET|SILICON CARBIDE MOSFETS

Diode - 4 Pin - Spaced v2

Trans MOSFET N-CH SiC 1.2KV 66A 4-Pin(4+Tab) TO-247

650V silicon carbide MOSFET technology optimized for high performance power electronics applications|Discrete SiC MOSFET, 650 V, 60 mΩ, 37 A, TO-247-4, RoHS|Trans MOSFET N-CH SiC 650V 37A Automotive Tube

Silicon Carbide Power 650V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode

Trans MOSFET N-CH SiC 650V 120A Automotive 4-Pin(4+Tab) TO-247 Tube|Discrete SiC MOSFET, 650 V, 15 mΩ, 120 A, TO-247-4, RoHS|650V silicon carbide MOSFET technology optimized for high performance power electron

Power Field-Effect Transistor, 100A I(D), 1200V, 0.0288ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247|Mosfet, N-Ch, 900V, 35A, To-263-7; Mosfet Module Configuration:single; Channel Type:n Channel; Continuous Dra

DPAK - 7 Full Lead v1

Trans MOSFET N-CH SiC 900V 35A 8-Pin(7+Tab) D2PAK T/R

Trans MOSFET N-CH SiC 1.2KV 10A 3-Pin(3+Tab) TO-247|Discrete SiC MOSFET, 1200 V, 280 mΩ, 10 A, TO-247-3, RoHS|MOSFET, N-CH, 1.2KV, 10A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 1.2kV; On Resis

2nd Generation Z-FET® 280-mΩ; 1200-V; SiC MOSFET

1A, 600V SiC Schottky Diode Tape and Reel RoHS Compliant: Yes|Diode 600V 1A 3-Pin(2+Tab) TO-252 T/R|DIODE SCHOTTKY 600V 2.2A TO252-2

Categories

Semiconductors

LEDs

Discrete Semiconductors

Integrated Circuits (ICs)

Optoelectronics

Diodes

Transistors

RF Semiconductors and Devices

Rectifier Diodes

Schottky Diodes

MOSFETs

RF Amplifiers

RF Transistors