Leshan Radio Co.

Manufacturers

Leshan Radio Co.

Leshan Radio Co. is a leader in telecommunications and power supply solutions, offering innovative products trusted by customers worldwide. Their cutting-edge technology reliably powers communication and terminal equipment across diverse applications.

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Diode - 3 Pin - Metal Tab v1

BJTs

Diode - 3 Pin - Tab v1

MOSFETs

Diode - 2 Pin - Elbow v2

Rectifier Diodes

Diode - 2 Pin - Flat Lead v2

Schottky Diodes

Axial - Diode v1

TVS Diodes

Integrated Circuit - Power Management - Voltage References

Voltage References

Diode - 2 Pin - Gull Wing

Zener Diodes

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BJTs
Circuit Protection
Diodes
Discrete Semiconductors
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Power Management ICs
Rectifier Diodes
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Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon
LBC856BLT1GLeshan Radio Co.
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon
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Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon
LBC856BLT1GLeshan Radio Co.
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon
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40V 225mW 200mA 100@10mA1V 300MHz 300mV@50mA5mA NPN -55°+150°(Tj) SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS
LMBT3904LT1GLeshan Radio Co.
40V 225mW 200mA 100@10mA1V 300MHz 300mV@50mA5mA NPN -55°+150°(Tj) SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS
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40V 225mW 200mA 100@10mA1V 300MHz 300mV@50mA5mA NPN -55°+150°(Tj) SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS
LMBT3904LT1GLeshan Radio Co.
40V 225mW 200mA 100@10mA1V 300MHz 300mV@50mA5mA NPN -55°+150°(Tj) SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS
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General Purpose Transistor 100mA 45V 100MHz 3Pin PNP SOT-23 Hfe220-450
LBC857BLT1GLeshan Radio Co.
General Purpose Transistor 100mA 45V 100MHz 3Pin PNP SOT-23 Hfe220-450
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General Purpose Transistor 100mA 45V 100MHz 3Pin PNP SOT-23 Hfe220-450
LBC857BLT1GLeshan Radio Co.
General Purpose Transistor 100mA 45V 100MHz 3Pin PNP SOT-23 Hfe220-450
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Schottky Barrier Diodes
LBAT54HT1GLeshan Radio Co.
Schottky Barrier Diodes
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Schottky Barrier Diodes
LBAT54HT1GLeshan Radio Co.
Schottky Barrier Diodes
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Switching Diode
LBAS16HT1GLeshan Radio Co.
Switching Diode
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Switching Diode
LBAS16HT1GLeshan Radio Co.
Switching Diode
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General Purpose Transistors NPN Silicon / Trans GP BJT NPN 65V 0.1A 300mW 3-Pin SOT-23 T/R
LBC846BLT1GLeshan Radio Co.
General Purpose Transistors NPN Silicon / Trans GP BJT NPN 65V 0.1A 300mW 3-Pin SOT-23 T/R
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General Purpose Transistors NPN Silicon / Trans GP BJT NPN 65V 0.1A 300mW 3-Pin SOT-23 T/R
LBC846BLT1GLeshan Radio Co.
General Purpose Transistors NPN Silicon / Trans GP BJT NPN 65V 0.1A 300mW 3-Pin SOT-23 T/R
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Rectifier Diode, 2 Element, 0.215A, 70V V(RRM), Silicon
LBAV99LT1GLeshan Radio Co.
Rectifier Diode, 2 Element, 0.215A, 70V V(RRM), Silicon
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Rectifier Diode, 2 Element, 0.215A, 70V V(RRM), Silicon
LBAV99LT1GLeshan Radio Co.
Rectifier Diode, 2 Element, 0.215A, 70V V(RRM), Silicon
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Switch Transistor 600mA 60V 200MHz 3Pin PNP SOT-23
LMBT2907ALT1GLeshan Radio Co.
Switch Transistor 600mA 60V 200MHz 3Pin PNP SOT-23
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Switch Transistor 600mA 60V 200MHz 3Pin PNP SOT-23
LMBT2907ALT1GLeshan Radio Co.
Switch Transistor 600mA 60V 200MHz 3Pin PNP SOT-23
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Schottky Barrier Rectifiers Reverse Voltage 20 to100V Forward Current 1.0A110–40 to +1500.50
SM140ALeshan Radio Co.
Schottky Barrier Rectifiers Reverse Voltage 20 to100V Forward Current 1.0A110–40 to +1500.50
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Schottky Barrier Rectifiers Reverse Voltage 20 to100V Forward Current 1.0A110–40 to +1500.50
SM140ALeshan Radio Co.
Schottky Barrier Rectifiers Reverse Voltage 20 to100V Forward Current 1.0A110–40 to +1500.50
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Switch Transistor 600mA 40V 200MHz 3Pin PNP SC-70
LMBT2907AWT1GLeshan Radio Co.
Switch Transistor 600mA 40V 200MHz 3Pin PNP SC-70
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Switch Transistor 600mA 40V 200MHz 3Pin PNP SC-70
LMBT2907AWT1GLeshan Radio Co.
Switch Transistor 600mA 40V 200MHz 3Pin PNP SC-70
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Rectifier Diode, Schottky, 2 Element, 0.2A, 30V V(RRM), Silicon, TO-236AB
LBAT54SLT1GLeshan Radio Co.
Rectifier Diode, Schottky, 2 Element, 0.2A, 30V V(RRM), Silicon, TO-236AB
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Rectifier Diode, Schottky, 2 Element, 0.2A, 30V V(RRM), Silicon, TO-236AB
LBAT54SLT1GLeshan Radio Co.
Rectifier Diode, Schottky, 2 Element, 0.2A, 30V V(RRM), Silicon, TO-236AB
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Switch Transistor 600mA 40V 250MHz 3Pin NPN SOT-23
LMBT4401LT1GLeshan Radio Co.
Switch Transistor 600mA 40V 250MHz 3Pin NPN SOT-23
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Switch Transistor 600mA 40V 250MHz 3Pin NPN SOT-23
LMBT4401LT1GLeshan Radio Co.
Switch Transistor 600mA 40V 250MHz 3Pin NPN SOT-23
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N-channel 1.8-V (g-s) Mosfet
LSI1012XT1GLeshan Radio Co.
N-channel 1.8-V (g-s) Mosfet
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N-channel 1.8-V (g-s) Mosfet
LSI1012XT1GLeshan Radio Co.
N-channel 1.8-V (g-s) Mosfet
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Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R / Small Signal MOSFET 115 mAmps, 60 Volts
L2N7002LT1GLeshan Radio Co.
Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R / Small Signal MOSFET 115 mAmps, 60 Volts
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Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R / Small Signal MOSFET 115 mAmps, 60 Volts
L2N7002LT1GLeshan Radio Co.
Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R / Small Signal MOSFET 115 mAmps, 60 Volts
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Schottky Barrier Diode
LBAS70-05LT1GLeshan Radio Co.
Schottky Barrier Diode
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Schottky Barrier Diode
LBAS70-05LT1GLeshan Radio Co.
Schottky Barrier Diode
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Voltage References 2.495V~36V -40°C+125°C (TA) 100mA Programmable SOT-23
LR431APTLT1GLeshan Radio Co.
Voltage References 2.495V~36V -40°C+125°C (TA) 100mA Programmable SOT-23
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Voltage References 2.495V~36V -40°C+125°C (TA) 100mA Programmable SOT-23
LR431APTLT1GLeshan Radio Co.
Voltage References 2.495V~36V -40°C+125°C (TA) 100mA Programmable SOT-23
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60V 115mA 7.5´Î@10V500mA 225mW 2.5V@250Ã×A N Channel SC-70(SC-70-3) MOSFETs ROHS
L2N7002WT1GLeshan Radio Co.
60V 115mA 7.5´Î@10V500mA 225mW 2.5V@250Ã×A N Channel SC-70(SC-70-3) MOSFETs ROHS
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60V 115mA 7.5´Î@10V500mA 225mW 2.5V@250Ã×A N Channel SC-70(SC-70-3) MOSFETs ROHS
L2N7002WT1GLeshan Radio Co.
60V 115mA 7.5´Î@10V500mA 225mW 2.5V@250Ã×A N Channel SC-70(SC-70-3) MOSFETs ROHS
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Schottky Barrier Diode Low current rectification and high speed switching
LRB521S-30T1GLeshan Radio Co.
Schottky Barrier Diode Low current rectification and high speed switching
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Schottky Barrier Diode Low current rectification and high speed switching
LRB521S-30T1GLeshan Radio Co.
Schottky Barrier Diode Low current rectification and high speed switching
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30V 5.8A 38m´Î@10V5.8A 1.4W 1.4V@250Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS
LN2306LT1GLeshan Radio Co.
30V 5.8A 38m´Î@10V5.8A 1.4W 1.4V@250Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS
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30V 5.8A 38m´Î@10V5.8A 1.4W 1.4V@250Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS
LN2306LT1GLeshan Radio Co.
30V 5.8A 38m´Î@10V5.8A 1.4W 1.4V@250Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS
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Schottky Barrier Rectifiers Reverse Voltage 20 to 200V Forward Current 1.0A
LMBR160ET1GLeshan Radio Co.
Schottky Barrier Rectifiers Reverse Voltage 20 to 200V Forward Current 1.0A
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Schottky Barrier Rectifiers Reverse Voltage 20 to 200V Forward Current 1.0A
LMBR160ET1GLeshan Radio Co.
Schottky Barrier Rectifiers Reverse Voltage 20 to 200V Forward Current 1.0A
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Rectifier Diode, Schottky, 1 Phase, 1 Element, 0.2A, 30V V(RRM), Silicon
LRB520S-30T1GLeshan Radio Co.
Rectifier Diode, Schottky, 1 Phase, 1 Element, 0.2A, 30V V(RRM), Silicon
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Rectifier Diode, Schottky, 1 Phase, 1 Element, 0.2A, 30V V(RRM), Silicon
LRB520S-30T1GLeshan Radio Co.
Rectifier Diode, Schottky, 1 Phase, 1 Element, 0.2A, 30V V(RRM), Silicon
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Schottky barrier diode
LRB551V-30T1GLeshan Radio Co.
Schottky barrier diode
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Schottky barrier diode
LRB551V-30T1GLeshan Radio Co.
Schottky barrier diode
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50V 200mA 225mW 3.5´Î@5V200mA 1.5V@1mA N Channel SOT-23(SOT-23-3) MOSFETs ROHS
LBSS138LT1GLeshan Radio Co.
50V 200mA 225mW 3.5´Î@5V200mA 1.5V@1mA N Channel SOT-23(SOT-23-3) MOSFETs ROHS
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50V 200mA 225mW 3.5´Î@5V200mA 1.5V@1mA N Channel SOT-23(SOT-23-3) MOSFETs ROHS
LBSS138LT1GLeshan Radio Co.
50V 200mA 225mW 3.5´Î@5V200mA 1.5V@1mA N Channel SOT-23(SOT-23-3) MOSFETs ROHS
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Field Effect Transistors 0.2A 50V 3Pin SOT-23 N-Channel(with ESD)
LBSS139LT1GLeshan Radio Co.
Field Effect Transistors 0.2A 50V 3Pin SOT-23 N-Channel(with ESD)
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Field Effect Transistors 0.2A 50V 3Pin SOT-23 N-Channel(with ESD)
LBSS139LT1GLeshan Radio Co.
Field Effect Transistors 0.2A 50V 3Pin SOT-23 N-Channel(with ESD)
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