3. IGBTs

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Trans IGBT Chip N=-CH 1200V 35A 298000mW 3-Pin(2+Tab) D2PAK T/R
Cost Savings
HGT1S10N120BNSTonsemi
Trans IGBT Chip N=-CH 1200V 35A 298000mW 3-Pin(2+Tab) D2PAK T/R
Available Quantity
20,800
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SG
Lead Time
5 Days
Country of Origin
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Trans IGBT Chip N=-CH 1200V 35A 298000mW 3-Pin(2+Tab) D2PAK T/R
Cost Savings
HGT1S10N120BNSTonsemi
Trans IGBT Chip N=-CH 1200V 35A 298000mW 3-Pin(2+Tab) D2PAK T/R
Available Quantity
20,800
Ships From
SG
Lead Time
5 Days
Country of Origin
-
Need More?
Trans IGBT Chip N-CH 600V 96A 330000mW 3-Pin(3+Tab) TO-247AD Tube
IRGP4068DPBFInfineon
Trans IGBT Chip N-CH 600V 96A 330000mW 3-Pin(3+Tab) TO-247AD Tube
Available Quantity
-
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Trans IGBT Chip N-CH 600V 96A 330000mW 3-Pin(3+Tab) TO-247AD Tube
IRGP4068DPBFInfineon
Trans IGBT Chip N-CH 600V 96A 330000mW 3-Pin(3+Tab) TO-247AD Tube
Available Quantity
-
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-
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Trans IGBT Module N-CH 600V 30A 27-Pin SPM27-EC Rail
FSBB30CH60Consemi
Trans IGBT Module N-CH 600V 30A 27-Pin SPM27-EC Rail
Available Quantity
-
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-
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Trans IGBT Module N-CH 600V 30A 27-Pin SPM27-EC Rail
FSBB30CH60Consemi
Trans IGBT Module N-CH 600V 30A 27-Pin SPM27-EC Rail
Available Quantity
-
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-
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Trench gate field-stop 650 V, 50 A high-speed HB2 IGBT, TO-247 long lead
STGWA50HP65FB2STMicroelectronics
Trench gate field-stop 650 V, 50 A high-speed HB2 IGBT, TO-247 long lead
Available Quantity
-
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Lead Time
-
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Trench gate field-stop 650 V, 50 A high-speed HB2 IGBT, TO-247 long lead
STGWA50HP65FB2STMicroelectronics
Trench gate field-stop 650 V, 50 A high-speed HB2 IGBT, TO-247 long lead
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Intelligent Power Module, 1200V, 20A
FSBB20CH120Donsemi
Intelligent Power Module, 1200V, 20A
Available Quantity
-
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-
Lead Time
-
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Intelligent Power Module, 1200V, 20A
FSBB20CH120Donsemi
Intelligent Power Module, 1200V, 20A
Available Quantity
-
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-
Lead Time
-
Country of Origin
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Trans IGBT Chip N-CH 650V 80A 274000mW 3-Pin(3+Tab) TO-247 Tube
IKW50N65ES5XKSA1Infineon
Trans IGBT Chip N-CH 650V 80A 274000mW 3-Pin(3+Tab) TO-247 Tube
Available Quantity
-
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Lead Time
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Trans IGBT Chip N-CH 650V 80A 274000mW 3-Pin(3+Tab) TO-247 Tube
IKW50N65ES5XKSA1Infineon
Trans IGBT Chip N-CH 650V 80A 274000mW 3-Pin(3+Tab) TO-247 Tube
Available Quantity
-
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Lead Time
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Trans IGBT Chip N-CH 1200V 10A 75000mW 3-Pin(2+Tab) DPAK T/R
STGD5NB120SZT4STMicroelectronics
Trans IGBT Chip N-CH 1200V 10A 75000mW 3-Pin(2+Tab) DPAK T/R
Available Quantity
-
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Trans IGBT Chip N-CH 1200V 10A 75000mW 3-Pin(2+Tab) DPAK T/R
STGD5NB120SZT4STMicroelectronics
Trans IGBT Chip N-CH 1200V 10A 75000mW 3-Pin(2+Tab) DPAK T/R
Available Quantity
-
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-
Lead Time
-
Country of Origin
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Integrated Power Module IC, 3-Phase, Internal Shunt, 600V, 30A, 18-Pin SIP-3-2
IRAM136-3063B2Infineon
Integrated Power Module IC, 3-Phase, Internal Shunt, 600V, 30A, 18-Pin SIP-3-2
Available Quantity
-
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-
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Integrated Power Module IC, 3-Phase, Internal Shunt, 600V, 30A, 18-Pin SIP-3-2
IRAM136-3063B2Infineon
Integrated Power Module IC, 3-Phase, Internal Shunt, 600V, 30A, 18-Pin SIP-3-2
Available Quantity
-
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Trench gate field-stop IGBT, HB series 600 V, 40 A high speed
STGW40H60DLFBSTMicroelectronics
Trench gate field-stop IGBT, HB series 600 V, 40 A high speed
Available Quantity
-
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Lead Time
-
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Trench gate field-stop IGBT, HB series 600 V, 40 A high speed
STGW40H60DLFBSTMicroelectronics
Trench gate field-stop IGBT, HB series 600 V, 40 A high speed
Available Quantity
-
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-
Lead Time
-
Country of Origin
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IGBT 600V 80A 333W TO247-3 / Trans IGBT Chip N-CH 600V 80A 333000mW 3-Pin(3+Tab) TO-247 Tube
IKW50N60TFKSA1Infineon
IGBT 600V 80A 333W TO247-3 / Trans IGBT Chip N-CH 600V 80A 333000mW 3-Pin(3+Tab) TO-247 Tube
Available Quantity
-
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Lead Time
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IGBT 600V 80A 333W TO247-3 / Trans IGBT Chip N-CH 600V 80A 333000mW 3-Pin(3+Tab) TO-247 Tube
IKW50N60TFKSA1Infineon
IGBT 600V 80A 333W TO247-3 / Trans IGBT Chip N-CH 600V 80A 333000mW 3-Pin(3+Tab) TO-247 Tube
Available Quantity
-
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-
Lead Time
-
Country of Origin
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Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin(3+Tab) TO-220AB Tube
STGP20NC60VSTMicroelectronics
Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin(3+Tab) TO-220AB Tube
Available Quantity
-
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-
Lead Time
-
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Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin(3+Tab) TO-220AB Tube
STGP20NC60VSTMicroelectronics
Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin(3+Tab) TO-220AB Tube
Available Quantity
-
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600V / 50A Intelligent Power Module (IPM)
PS21A79Mitsubishi
600V / 50A Intelligent Power Module (IPM)
Available Quantity
-
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600V / 50A Intelligent Power Module (IPM)
PS21A79Mitsubishi
600V / 50A Intelligent Power Module (IPM)
Available Quantity
-
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Lead Time
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Trans IGBT Chip N-CH 650V 73A 272000mW Automotive 3-Pin(3+Tab) TO-247N Tube
RGS80TS65DHRC11ROHM
Trans IGBT Chip N-CH 650V 73A 272000mW Automotive 3-Pin(3+Tab) TO-247N Tube
Available Quantity
-
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Lead Time
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Trans IGBT Chip N-CH 650V 73A 272000mW Automotive 3-Pin(3+Tab) TO-247N Tube
RGS80TS65DHRC11ROHM
Trans IGBT Chip N-CH 650V 73A 272000mW Automotive 3-Pin(3+Tab) TO-247N Tube
Available Quantity
-
Ships From
-
Lead Time
-
Country of Origin
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Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin(3+Tab) TO-220AB Tube
STGP35HF60WSTMicroelectronics
Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin(3+Tab) TO-220AB Tube
Available Quantity
-
Ships From
-
Lead Time
-
Country of Origin
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Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin(3+Tab) TO-220AB Tube
STGP35HF60WSTMicroelectronics
Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin(3+Tab) TO-220AB Tube
Available Quantity
-
Ships From
-
Lead Time
-
Country of Origin
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High-Speed Fast Switching Type, 650V 30A, FRD Built-in, TO-247N, Field Stop Trench IGBT
RGW60TS65DGC13ROHM
High-Speed Fast Switching Type, 650V 30A, FRD Built-in, TO-247N, Field Stop Trench IGBT
Available Quantity
-
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-
Lead Time
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High-Speed Fast Switching Type, 650V 30A, FRD Built-in, TO-247N, Field Stop Trench IGBT
RGW60TS65DGC13ROHM
High-Speed Fast Switching Type, 650V 30A, FRD Built-in, TO-247N, Field Stop Trench IGBT
Available Quantity
-
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-
Lead Time
-
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Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-247
RGW60TS65GC13ROHM
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-247
Available Quantity
-
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Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-247
RGW60TS65GC13ROHM
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-247
Available Quantity
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Insulated Gate Bipolar Transistor, 60A I(C), 1600V V(BR)CES, N-Channel, TO-247
IHW30N160R5XKSA1Infineon
Insulated Gate Bipolar Transistor, 60A I(C), 1600V V(BR)CES, N-Channel, TO-247
Available Quantity
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Lead Time
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Insulated Gate Bipolar Transistor, 60A I(C), 1600V V(BR)CES, N-Channel, TO-247
IHW30N160R5XKSA1Infineon
Insulated Gate Bipolar Transistor, 60A I(C), 1600V V(BR)CES, N-Channel, TO-247
Available Quantity
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Trans IGBT Chip N=-CH 650V 80A 305000mW 3-Pin(3+Tab) TO-247 Tube
IKW50N65H5FKSA1Infineon
Trans IGBT Chip N=-CH 650V 80A 305000mW 3-Pin(3+Tab) TO-247 Tube
Available Quantity
-
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-
Lead Time
-
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Trans IGBT Chip N=-CH 650V 80A 305000mW 3-Pin(3+Tab) TO-247 Tube
IKW50N65H5FKSA1Infineon
Trans IGBT Chip N=-CH 650V 80A 305000mW 3-Pin(3+Tab) TO-247 Tube
Available Quantity
-
Ships From
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Lead Time
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Country of Origin
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1.05 kV 429 A 1.08 kW Chassis Mount Trench Field Stop 3-Level IGBT Module
NXH600N105L7F5S1HGonsemi
1.05 kV 429 A 1.08 kW Chassis Mount Trench Field Stop 3-Level IGBT Module
Available Quantity
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1.05 kV 429 A 1.08 kW Chassis Mount Trench Field Stop 3-Level IGBT Module
NXH600N105L7F5S1HGonsemi
1.05 kV 429 A 1.08 kW Chassis Mount Trench Field Stop 3-Level IGBT Module
Available Quantity
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Trans IGBT Chip N-CH 650V 80A 283000mW 3-Pin(3+Tab) TO-247 Tube
STGW40H65DFBSTMicroelectronics
Trans IGBT Chip N-CH 650V 80A 283000mW 3-Pin(3+Tab) TO-247 Tube
Available Quantity
-
Ships From
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Lead Time
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Trans IGBT Chip N-CH 650V 80A 283000mW 3-Pin(3+Tab) TO-247 Tube
STGW40H65DFBSTMicroelectronics
Trans IGBT Chip N-CH 650V 80A 283000mW 3-Pin(3+Tab) TO-247 Tube
Available Quantity
-
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Lead Time
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Power Driver Module IGBT 3 Phase Inverter 600 V 50 A 27-PowerDIP Module (1.205", 30.60mm)
FNB35060Tonsemi
Power Driver Module IGBT 3 Phase Inverter 600 V 50 A 27-PowerDIP Module (1.205", 30.60mm)
Available Quantity
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Power Driver Module IGBT 3 Phase Inverter 600 V 50 A 27-PowerDIP Module (1.205", 30.60mm)
FNB35060Tonsemi
Power Driver Module IGBT 3 Phase Inverter 600 V 50 A 27-PowerDIP Module (1.205", 30.60mm)
Available Quantity
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IGBT Transistors Trench gate field-stop, 1200 V, 8 A low loss M series IGBT in a TO-220 package
STGP8M120DF3STMicroelectronics
IGBT Transistors Trench gate field-stop, 1200 V, 8 A low loss M series IGBT in a TO-220 package
Available Quantity
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Lead Time
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IGBT Transistors Trench gate field-stop, 1200 V, 8 A low loss M series IGBT in a TO-220 package
STGP8M120DF3STMicroelectronics
IGBT Transistors Trench gate field-stop, 1200 V, 8 A low loss M series IGBT in a TO-220 package
Available Quantity
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Trans Igbt 2.5KV 32A Isoplus I4-PAC Rohs Compliant: Yes |ixys Semiconductor IXLF19N250A
IXLF19N250ALittelfuse
Trans Igbt 2.5KV 32A Isoplus I4-PAC Rohs Compliant: Yes |ixys Semiconductor IXLF19N250A
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Trans Igbt 2.5KV 32A Isoplus I4-PAC Rohs Compliant: Yes |ixys Semiconductor IXLF19N250A
IXLF19N250ALittelfuse
Trans Igbt 2.5KV 32A Isoplus I4-PAC Rohs Compliant: Yes |ixys Semiconductor IXLF19N250A
Available Quantity
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IXGH Series 600 Vce 72 A 31 ns t(on) GenX3 IGBT - TO-247AD
IXGH72N60A3Littelfuse
IXGH Series 600 Vce 72 A 31 ns t(on) GenX3 IGBT - TO-247AD
Available Quantity
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IXGH Series 600 Vce 72 A 31 ns t(on) GenX3 IGBT - TO-247AD
IXGH72N60A3Littelfuse
IXGH Series 600 Vce 72 A 31 ns t(on) GenX3 IGBT - TO-247AD
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