3. RF Transistors

RF Transistors

1 - 24 of 307 results
RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET
AFT27S010NT1NXP Semiconductors
RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET
Available Quantity
-
Ships From
-
Lead Time
-
Country of Origin
-
RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET
AFT27S010NT1NXP Semiconductors
RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET
Available Quantity
-
Ships From
-
Lead Time
-
Country of Origin
-
GaN RF Transistor 2.5GHz to 5GHz 8W 48V QFN
QPD0005TR13Qorvo
GaN RF Transistor 2.5GHz to 5GHz 8W 48V QFN
Available Quantity
-
Ships From
-
Lead Time
-
Country of Origin
-
GaN RF Transistor 2.5GHz to 5GHz 8W 48V QFN
QPD0005TR13Qorvo
GaN RF Transistor 2.5GHz to 5GHz 8W 48V QFN
Available Quantity
-
Ships From
-
Lead Time
-
Country of Origin
-
RF Power Transistor, 1.8 to 250 MHz, 100 W CW, Typ gain in dB is 23 @ 50 MHz, TO-220-3L, LDMOS
MRF101ANNXP Semiconductors
RF Power Transistor, 1.8 to 250 MHz, 100 W CW, Typ gain in dB is 23 @ 50 MHz, TO-220-3L, LDMOS
Available Quantity
-
Ships From
-
Lead Time
-
Country of Origin
-
RF Power Transistor, 1.8 to 250 MHz, 100 W CW, Typ gain in dB is 23 @ 50 MHz, TO-220-3L, LDMOS
MRF101ANNXP Semiconductors
RF Power Transistor, 1.8 to 250 MHz, 100 W CW, Typ gain in dB is 23 @ 50 MHz, TO-220-3L, LDMOS
Available Quantity
-
Ships From
-
Lead Time
-
Country of Origin
-
Lateral N-Channel Broadband RF Power MOSFET, 520 MHz, 3 W, 12.5 V
MRF1513NT1NXP Semiconductors
Lateral N-Channel Broadband RF Power MOSFET, 520 MHz, 3 W, 12.5 V
Available Quantity
-
Ships From
-
Lead Time
-
Country of Origin
-
Lateral N-Channel Broadband RF Power MOSFET, 520 MHz, 3 W, 12.5 V
MRF1513NT1NXP Semiconductors
Lateral N-Channel Broadband RF Power MOSFET, 520 MHz, 3 W, 12.5 V
Available Quantity
-
Ships From
-
Lead Time
-
Country of Origin
-
Looking for something specific?
We’ll help you source it directly.
RFQ Card
Background Pattern
Single W-CDMA Lateral N-Channel RF Power MOSFET, 865-960 MHz, 33 W Avg., 28 V
MRF8S9120NR3NXP Semiconductors
Single W-CDMA Lateral N-Channel RF Power MOSFET, 865-960 MHz, 33 W Avg., 28 V
Available Quantity
-
Ships From
-
Lead Time
-
Country of Origin
-
Single W-CDMA Lateral N-Channel RF Power MOSFET, 865-960 MHz, 33 W Avg., 28 V
MRF8S9120NR3NXP Semiconductors
Single W-CDMA Lateral N-Channel RF Power MOSFET, 865-960 MHz, 33 W Avg., 28 V
Available Quantity
-
Ships From
-
Lead Time
-
Country of Origin
-
Airfast RF Power LDMOS Transistor, 710-960 MHz, 160 W Avg., 28 V, CFM4F, RoHS
A2T07D160W04SR3NXP Semiconductors
Airfast RF Power LDMOS Transistor, 710-960 MHz, 160 W Avg., 28 V, CFM4F, RoHS
Available Quantity
-
Ships From
-
Lead Time
-
Country of Origin
-
Airfast RF Power LDMOS Transistor, 710-960 MHz, 160 W Avg., 28 V, CFM4F, RoHS
A2T07D160W04SR3NXP Semiconductors
Airfast RF Power LDMOS Transistor, 710-960 MHz, 160 W Avg., 28 V, CFM4F, RoHS
Available Quantity
-
Ships From
-
Lead Time
-
Country of Origin
-
MRFE6VS Series 133 V 512 MHz RF Power LDMOS Transistor - TO-270-2 GULL
MRFE6VS25GNR1NXP Semiconductors
MRFE6VS Series 133 V 512 MHz RF Power LDMOS Transistor - TO-270-2 GULL
Available Quantity
-
Ships From
-
Lead Time
-
Country of Origin
-
MRFE6VS Series 133 V 512 MHz RF Power LDMOS Transistor - TO-270-2 GULL
MRFE6VS25GNR1NXP Semiconductors
MRFE6VS Series 133 V 512 MHz RF Power LDMOS Transistor - TO-270-2 GULL
Available Quantity
-
Ships From
-
Lead Time
-
Country of Origin
-
Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 56 W Avg., 28 V/ Reel
A3T21H360W23SR6NXP Semiconductors
Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 56 W Avg., 28 V/ Reel
Available Quantity
-
Ships From
-
Lead Time
-
Country of Origin
-
Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 56 W Avg., 28 V/ Reel
A3T21H360W23SR6NXP Semiconductors
Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 56 W Avg., 28 V/ Reel
Available Quantity
-
Ships From
-
Lead Time
-
Country of Origin
-
AiRFast Wideband RF Power Ldmos Transistor 1.8-941 MHz, 3 W, 7.5V
AFT05MS003NT1NXP Semiconductors
AiRFast Wideband RF Power Ldmos Transistor 1.8-941 MHz, 3 W, 7.5V
Available Quantity
-
Ships From
-
Lead Time
-
Country of Origin
-
AiRFast Wideband RF Power Ldmos Transistor 1.8-941 MHz, 3 W, 7.5V
AFT05MS003NT1NXP Semiconductors
AiRFast Wideband RF Power Ldmos Transistor 1.8-941 MHz, 3 W, 7.5V
Available Quantity
-
Ships From
-
Lead Time
-
Country of Origin
-
N-Channel 125 V 389 W HF/VHF/UHF MOS Field-Effect RF Power Transistor-M174
SD2931-10WSTMicroelectronics
N-Channel 125 V 389 W HF/VHF/UHF MOS Field-Effect RF Power Transistor-M174
Available Quantity
-
Ships From
-
Lead Time
-
Country of Origin
-
N-Channel 125 V 389 W HF/VHF/UHF MOS Field-Effect RF Power Transistor-M174
SD2931-10WSTMicroelectronics
N-Channel 125 V 389 W HF/VHF/UHF MOS Field-Effect RF Power Transistor-M174
Available Quantity
-
Ships From
-
Lead Time
-
Country of Origin
-
Airfast RF Power LDMOS Transistor 400-2700 MHz, 2.5 W Avg., 28 V, FM2
A2T27S020GNR1NXP Semiconductors
Airfast RF Power LDMOS Transistor 400-2700 MHz, 2.5 W Avg., 28 V, FM2
Available Quantity
-
Ships From
-
Lead Time
-
Country of Origin
-
Airfast RF Power LDMOS Transistor 400-2700 MHz, 2.5 W Avg., 28 V, FM2
A2T27S020GNR1NXP Semiconductors
Airfast RF Power LDMOS Transistor 400-2700 MHz, 2.5 W Avg., 28 V, FM2
Available Quantity
-
Ships From
-
Lead Time
-
Country of Origin
-
Airfast RF Power LDMOS Transistor, 1805-2690 MHz 1.5 W Avg., 28 V
AFT20S015NR1NXP Semiconductors
Airfast RF Power LDMOS Transistor, 1805-2690 MHz 1.5 W Avg., 28 V
Available Quantity
-
Ships From
-
Lead Time
-
Country of Origin
-
Airfast RF Power LDMOS Transistor, 1805-2690 MHz 1.5 W Avg., 28 V
AFT20S015NR1NXP Semiconductors
Airfast RF Power LDMOS Transistor, 1805-2690 MHz 1.5 W Avg., 28 V
Available Quantity
-
Ships From
-
Lead Time
-
Country of Origin
-
Telecom, LDMOS, 28 V, 400W, 13.5 dB, Surface Mount, RoHS
PXAE263708NB-V1-R2Wolfspeed
Telecom, LDMOS, 28 V, 400W, 13.5 dB, Surface Mount, RoHS
Available Quantity
-
Ships From
-
Lead Time
-
Country of Origin
-
Telecom, LDMOS, 28 V, 400W, 13.5 dB, Surface Mount, RoHS
PXAE263708NB-V1-R2Wolfspeed
Telecom, LDMOS, 28 V, 400W, 13.5 dB, Surface Mount, RoHS
Available Quantity
-
Ships From
-
Lead Time
-
Country of Origin
-
RF Power Transistor, 1.8 to 2000 MHz, 100 W, Typ Gain in dB is 27.2 @ 512 MHz, 50 V, LDMOS, SOT1827
MRFE6VP100HR5NXP Semiconductors
RF Power Transistor, 1.8 to 2000 MHz, 100 W, Typ Gain in dB is 27.2 @ 512 MHz, 50 V, LDMOS, SOT1827
Available Quantity
-
Ships From
-
Lead Time
-
Country of Origin
-
RF Power Transistor, 1.8 to 2000 MHz, 100 W, Typ Gain in dB is 27.2 @ 512 MHz, 50 V, LDMOS, SOT1827
MRFE6VP100HR5NXP Semiconductors
RF Power Transistor, 1.8 to 2000 MHz, 100 W, Typ Gain in dB is 27.2 @ 512 MHz, 50 V, LDMOS, SOT1827
Available Quantity
-
Ships From
-
Lead Time
-
Country of Origin
-
100-W; 7.9 – 9.6-GHz; 50-ohm; Input/Output-Matched; GaN HEMT Power Amplifier
CGHV96100F2Wolfspeed
100-W; 7.9 – 9.6-GHz; 50-ohm; Input/Output-Matched; GaN HEMT Power Amplifier
Available Quantity
-
Ships From
-
Lead Time
-
Country of Origin
-
100-W; 7.9 – 9.6-GHz; 50-ohm; Input/Output-Matched; GaN HEMT Power Amplifier
CGHV96100F2Wolfspeed
100-W; 7.9 – 9.6-GHz; 50-ohm; Input/Output-Matched; GaN HEMT Power Amplifier
Available Quantity
-
Ships From
-
Lead Time
-
Country of Origin
-
45W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
PD57045-ESTMicroelectronics
45W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
Available Quantity
-
Ships From
-
Lead Time
-
Country of Origin
-
45W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
PD57045-ESTMicroelectronics
45W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
Available Quantity
-
Ships From
-
Lead Time
-
Country of Origin
-
30W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
PD57030S-ESTMicroelectronics
30W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
Available Quantity
-
Ships From
-
Lead Time
-
Country of Origin
-
30W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
PD57030S-ESTMicroelectronics
30W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
Available Quantity
-
Ships From
-
Lead Time
-
Country of Origin
-
Trans RF MOSFET N-CH 40V 4A 3-Pin(2+Tab) PowerSO-10RF (Formed lead) Tube
PD55008-ESTMicroelectronics
Trans RF MOSFET N-CH 40V 4A 3-Pin(2+Tab) PowerSO-10RF (Formed lead) Tube
Available Quantity
-
Ships From
-
Lead Time
-
Country of Origin
-
Trans RF MOSFET N-CH 40V 4A 3-Pin(2+Tab) PowerSO-10RF (Formed lead) Tube
PD55008-ESTMicroelectronics
Trans RF MOSFET N-CH 40V 4A 3-Pin(2+Tab) PowerSO-10RF (Formed lead) Tube
Available Quantity
-
Ships From
-
Lead Time
-
Country of Origin
-
Trans RF MOSFET N-CH 25V 5A 3-Pin(2+Tab) PowerSO-10RF (Formed lead) Tube
PD54008-ESTMicroelectronics
Trans RF MOSFET N-CH 25V 5A 3-Pin(2+Tab) PowerSO-10RF (Formed lead) Tube
Available Quantity
-
Ships From
-
Lead Time
-
Country of Origin
-
Trans RF MOSFET N-CH 25V 5A 3-Pin(2+Tab) PowerSO-10RF (Formed lead) Tube
PD54008-ESTMicroelectronics
Trans RF MOSFET N-CH 25V 5A 3-Pin(2+Tab) PowerSO-10RF (Formed lead) Tube
Available Quantity
-
Ships From
-
Lead Time
-
Country of Origin
-
SD2932 Series 250 MHz 300W 125V N-Channel HF/VHF/UHF RF Power Transistor - M-244
SD2932WSTMicroelectronics
SD2932 Series 250 MHz 300W 125V N-Channel HF/VHF/UHF RF Power Transistor - M-244
Available Quantity
-
Ships From
-
Lead Time
-
Country of Origin
-
SD2932 Series 250 MHz 300W 125V N-Channel HF/VHF/UHF RF Power Transistor - M-244
SD2932WSTMicroelectronics
SD2932 Series 250 MHz 300W 125V N-Channel HF/VHF/UHF RF Power Transistor - M-244
Available Quantity
-
Ships From
-
Lead Time
-
Country of Origin
-
Transistor, RF Power, Matched Pair VRF151 30-175 MHz, 150 W , 50V, .500 4LFL Pkg
VRF151MPMicrochip
Transistor, RF Power, Matched Pair VRF151 30-175 MHz, 150 W , 50V, .500 4LFL Pkg
Available Quantity
-
Ships From
-
Lead Time
-
Country of Origin
-
Transistor, RF Power, Matched Pair VRF151 30-175 MHz, 150 W , 50V, .500 4LFL Pkg
VRF151MPMicrochip
Transistor, RF Power, Matched Pair VRF151 30-175 MHz, 150 W , 50V, .500 4LFL Pkg
Available Quantity
-
Ships From
-
Lead Time
-
Country of Origin
-
Single N-Channel 40 V 52.8 W Silicon Surface Mount MOSFET - POWERSO-10RF
PD55008TR-ESTMicroelectronics
Single N-Channel 40 V 52.8 W Silicon Surface Mount MOSFET - POWERSO-10RF
Available Quantity
-
Ships From
-
Lead Time
-
Country of Origin
-
Single N-Channel 40 V 52.8 W Silicon Surface Mount MOSFET - POWERSO-10RF
PD55008TR-ESTMicroelectronics
Single N-Channel 40 V 52.8 W Silicon Surface Mount MOSFET - POWERSO-10RF
Available Quantity
-
Ships From
-
Lead Time
-
Country of Origin
-
AiRFast Wideband RF Power Ldmos Transistor, 764-941 MHz, 31 W, 13.6 V
AFT09MS031NR1NXP Semiconductors
AiRFast Wideband RF Power Ldmos Transistor, 764-941 MHz, 31 W, 13.6 V
Available Quantity
-
Ships From
-
Lead Time
-
Country of Origin
-
AiRFast Wideband RF Power Ldmos Transistor, 764-941 MHz, 31 W, 13.6 V
AFT09MS031NR1NXP Semiconductors
AiRFast Wideband RF Power Ldmos Transistor, 764-941 MHz, 31 W, 13.6 V
Available Quantity
-
Ships From
-
Lead Time
-
Country of Origin
-
Airfast RF Power LDMOS Transistor, 450-851 MHz, 107 W Avg., 48 V, FM4F, RoHS
A2V07H400-04NR3NXP Semiconductors
Airfast RF Power LDMOS Transistor, 450-851 MHz, 107 W Avg., 48 V, FM4F, RoHS
Available Quantity
-
Ships From
-
Lead Time
-
Country of Origin
-
Airfast RF Power LDMOS Transistor, 450-851 MHz, 107 W Avg., 48 V, FM4F, RoHS
A2V07H400-04NR3NXP Semiconductors
Airfast RF Power LDMOS Transistor, 450-851 MHz, 107 W Avg., 48 V, FM4F, RoHS
Available Quantity
-
Ships From
-
Lead Time
-
Country of Origin
-

GET IN TOUCH

Access our worldwide supply of vetted, quality parts.

GET IN TOUCH

Access our worldwide supply of vetted, quality parts.

Contact Us
The Latest Insights

The Latest Insights