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Manufacturers

20

Mount

5

Number of Pins

11

Collector Emitter Breakdown Voltage

8

Case/Package

11

Max Collector Current

25

Collector Emitter Saturation Voltage

25

Power Dissipation

8

Reverse Recovery Time

7
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Available Quantity
20,800
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Lead Time
5 Days
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Trans IGBT Chip N=-CH 1200V 35A 298000mW 3-Pin(2+Tab) D2PAK T/R
Cost Savings
Available Quantity
20,800
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SG
Lead Time
5 Days
Country of Origin
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Trans IGBT Chip N-CH 600V 96A 330000mW 3-Pin(3+Tab) TO-247AD Tube
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Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin(3+Tab) TO-220AB Tube
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Insulated Gate Bipolar Transistor, 60A I(C), 1600V V(BR)CES, N-Channel, TO-247
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Trench gate field-stop IGBT, HB series 600 V, 40 A high speed
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600V / 50A Intelligent Power Module (IPM)
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FSBB20CH60BT Series 600 V 20 A 3-Phase IGBT Smart Power Module - SPM-27CC
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IXGH Series 600 Vce 72 A 31 ns t(on) GenX3 IGBT - TO-247AD
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Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin(3+Tab) TO-220AB Tube
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Trans IGBT Chip N-CH 650V 80A 283000mW 3-Pin(3+Tab) TO-247 Tube
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Power Driver Module IGBT 3 Phase Inverter 600 V 50 A 27-PowerDIP Module (1.205", 30.60mm)
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650 V, 30 A IGBT with anti-parallel diode in TO-263 package, PG-TO263-3, RoHS
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Trans IGBT Chip N-CH 600V 140A 3-Pin(3+Tab) TO-247AC
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600 V 15 A IGBT 3 Phase Through Hole Power Driver Module - PowerDIP Module-24
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STGP10NB60S Series N-Channel 600 V 10 A PowerMESH IGBT - TO-220
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Trans IGBT Chip N-CH 1200V 21A 167000mW 3-Pin(3+Tab) TO-220AB Rail
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Trans IGBT Module N-CH 600V 30A 27-Pin SPM27-EC Rail
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Trench gate field-stop IGBT, HB series 650 V, 60 A high speed
Available Quantity
3,000
Ships From
SG
Lead Time
5 Days
Country of Origin
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Trans IGBT Chip N-CH 650V 80A 375000mW 3-Pin(3+Tab) TO-3P Tube
Available Quantity
3,000
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SG
Lead Time
5 Days
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Trans IGBT Chip N-CH 600V 60A 260000mW 3-Pin(3+Tab) TO-220AB Tube
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Dual-In-Line Package Intelligent Power Module
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